MHVIC915R2 Datasheet, PDF (1/14 Pages) Motorola, Inc – 746-960 MHz RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
The MHVIC915R2 wideband integrated circuit is designed with on - chip
matching that makes it usable from 750 to 1000 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
• Typical Single - Carrier N - CDMA Performance: V_DD = 27 Volts, I_DQ1 =
80 mA, I_DQ2 = 120 mA, P_out = 34 dBm, Full Frequency Band (746 to
960 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — - 50 dBc @ 30 kHz Bandwidth
Driver Applications
• Typical Single - Carrier N - CDMA Performance: V_DD = 27 Volts, I_DQ1 = 80
mA, I_DQ2 = 120 mA, P_out = 23 dBm, Full Frequency Band (869 -
894 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — - 60 dBc @ 30 kHz Bandwidth
ACPR @ 1.98 MHz Offset — - 66 dBc @ 30 kHz Bandwidth
• Typical GSM Performance: V_DD = 26 Volts, P_out = 15 W P1dB, Full
Frequency Band (921 - 960 MHz)
Power Gain — 30 dB @ P1dB
Power Added Efficiency = 56% @ P1dB
• Capable of Handling 3:1 VSWR, @ 27 Vdc, 880 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >9 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On - Chip Current Mirror g_m Reference FET for Self Biasing Application ⁽¹⁾
• Integrated ESD Protection
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Document Number: MHVIC915R2
Rev. 8, 8/2006
MHVIC915R2
746 - 960 MHz, 15 W, 27 V
SINGLE N - CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
PLASTIC
Replaced by MHVIC915NR2. There are
no form, fit or function changes with this
part replacement. N suffix indicates RoHS
compliant part.
V_RD1
V_RG1
V_DS1
RF_in
2 Stage IC
V_GS1
Quiescent Current
V_GS2
Temperature Compensation
Figure 1. Block Diagram
V_DS2/RF_out
N.C. 1
V_RD1 2
V_RG1 3
V_DS1 4
GND 5
RF_in 6
V_GS1 7
V_GS2 8
16 N.C.
15 V_DS2/RF_out
14 VDS2/RFout
13 V_DS2/RF_out
12 V_DS2/RF_out
11 VDS2/RFout
10 V_DS2/RF_out
9 N.C.
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHVIC915R2
1