MRF6V2300NR1 Datasheet, PDF (15/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
1
2
3
Date
Feb. 2007
Feb. 2007
May 2007
Jan. 2008
Description
• Initial Release of Data Sheet
• Added Fig. 1, Pin Connections, p. 1
• Removed footnote references listed for Operating Junction Temperature, Table 1, Maximum Ratings, p. 1
• Added Max value to Power Gain, Table 5, Functional Tests, p. 2
• Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4,
C19, C5, C18, C9, C12, C14, and C23, p. 3
• Increased operating frequency to 600 MHz, p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Corrected C_iss test condition to indicate AC stimulus on the V_GS connection versus the V_DS connection,
Dynamic Characteristics table, p. 2
• Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3
• Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 9 - 11. Added pin numbers 1 through 4
on Sheet 1.
• Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 12 - 14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
RF Device Data
Freescale Semiconductor
MRF6V2300NR1 MRF6V2300NBR1
15