MRF6V2300NR1 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: V_DD = 50 Volts, I_DQ = 900 mA,
P_out = 300 Watts, f = 220 MHz
Power Gain — 25.5 dB
Drain Efficiency — 68%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6V2300N
Rev. 3, 1/2008
MRF6V2300NR1
MRF6V2300NBR1
10 - 600 MHz, 300 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2300NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2300NBR1
PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Rating
© Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF_in/V_GS
RF_out/V_DS
RF_in/V_GS
RF_out/V_DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Symbol
V_DSS
V_GS
T_stg
T_C
T_J
Value
- 0.5, +110
- 0.5, +10
- 65 to +150
150
200
Unit
Vdc
Vdc
°C
°C
°C
MRF6V2300NR1 MRF6V2300NBR1
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