MC9S08AC128 Datasheet, PDF (14/42 Pages) Freescale Semiconductor, Inc – 8-Bit Microcontroller

Chapter 3 Electrical Characteristics and Timing Specifications
K = P_D × (T_A + 273°C) + θ_JA × (P_D)²
Eqn. 3-3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring P_D (at equilibrium)
for a known T_A. Using this value of K, the values of P_D and T_J can be obtained by solving equations 1 and 2 iteratively for any
value of T_A.
3.5 ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits and
JEDEC Standard for Non-Automotive Grade Integrated Circuits. During the device qualification ESD stresses were performed
for the Human Body Model (HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 3-4. ESD and Latch-up Test Conditions
Model
Human Body
Machine
Latch-up
Description
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Symbol
R1
C
–
R1
C
–
Value
1500
100
3
0
200
3
– 2.5
7.5
Unit
Ω
pF
Ω
pF
V
V
Table 3-5. ESD and Latch-Up Protection Characteristics
Num C
Rating
1 C Human Body Model (HBM)
2 C Machine Model (MM)
3 C Charge Device Model (CDM)
4 C Latch-up Current at T_A = 125°C
Symbol
V_HBM
V_MM
V_CDM
I_LAT
Min
± 2000
± 200
± 500
± 100
Max
–
–
–
–
Unit
V
V
V
mA
3.6 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power supply current in various
operating modes.
MC9S08AC128 Series Data Sheet, Rev. 1
14
Freescale Semiconductor
Preliminary — Subject to Change