MRF8P9300HR6_10 Datasheet, PDF(12/18 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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MRF8P9300HR6_10 Datasheet, PDF (12/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

◁

VDD = 28 Vdc, IDQ = 2400 mA, Pout = 100 W Avg.

MHz

Zsource

â¦

Zload

â¦

820

0.45 -- j0.78

1.72 -- j0.73

840

0.42 + j0.34

1.67 -- j0.39

860

0.39 + j0.05

1.59 -- j0.06

880

0.40 + j0.05

1.44 -- j0.17

900

0.49 + j0.84

1.35 + j0.35

920

0.75 + j1.32

1.30 + j0.61

940

1.58 + j1.77

1.32 + 0.93

960

2.16 + j0.62

1.27 + j1.14

980

1.37 + j0.64

1.21 + j1.30

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured from

drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 17. Series Equivalent Source and Load Impedance â 865--895 MHz

MRF8P9300HR6 MRF8P9300HSR6

RF Device Data

Freescale Semiconductor

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