MRF8P9300HR6_10 Datasheet, PDF (1/18 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRF8P9300H
Rev. 1.1, 7/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier GSM base station applications with
frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ =
2400 mA, P_out = 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz
19.6
35.4
6.0
--37.3
940 MHz
19.6
35.6
6.0
--37.1
960 MHz
19.4
35.8
5.9
--36.7
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW
Output Power (3 dB Input Overdrive from Rated P_out), Designed for
Enhanced Ruggedness
• Typical P_out @ 1 dB Compression Point ≃ 326 Watts CW
880 MHz
• Typical Single--Carrier W--CDMA Performance: V_DD = 28 Volts, I_DQ =
2400 mA, P_out = 100 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
865 MHz
20.5
35.2
6.0
--36.1
880 MHz
20.7
36.0
6.0
--36.1
895 MHz
20.6
37.0
6.0
--35.8
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF8P9300HR6
MRF8P9300HSR6
920--960 MHz, 100 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRF8P9300HR6
CASE 375E--04, STYLE 1
NI--1230S
MRF8P9300HSR6
RF_inA/V_GSA 3
1 RF_outA/V_DSA
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
V_DSS
--0.5, +70
Vdc
Gate--Source Voltage
V_GS
--6.0, +10
Vdc
Operating Voltage
V_DD
32, +0
Vdc
Storage Temperature Range
T_stg
--65 to +150
°C
Case Operating Temperature
Operating Junction Temperature ^(1,2)
T_C
150
°C
T_J
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8P9300HR6 MRF8P9300HSR6
1