MRF7S18170H Datasheet, PDF (12/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
60
59
P6dB = 54.1 dBm (257 W)
Ideal
58 _{P3dB = 53.8 dBm (240 W)}
57
56
P1dB = 52.8 dBm (190 W)
55
54
Actual
53
52
V_DD = 28 Vdc, I_DQ = 1400 mA
51
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1840 MHz
50
32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
3dB
1.23 - j7.91
0.88 - j2.81
61
Ideal
60
P6dB = 55 dBm (316.23 W)
59
P3dB = 54.65 dBm (290 W)
58
57
P1dB = 54.05 dBm
56 _{(254.1 W)}
55
54
Actual
53
V_DD = 32 Vdc, I_DQ = 1400 mA
52
Pulsed CW, 12 μsec(on),
10% Duty Cycle, f = 1840 MHz
51
32 33 34 35 36 37 38 39 40 41 42 43 44
P_in, INPUT POWER (dBm)
NOTE: Measured in a Peak Tuned Load Pull Fixture
Test Impedances per Compression Level
Z_source
Ω
Z_load
Ω
P3dB
1.23 - j7.91
1.03 - j2.65
Figure 19. Pulsed CW Output Power
versus Input Power
Figure 20. Pulsed CW Output Power
versus Input Power
MRF7S18170HR3 MRF7S18170HSR3
12
RF Device Data
Freescale Semiconductor