MRF7S18170H Datasheet, PDF (10/15 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors (N-Channel Enhancement-Mode Lateral MOSFETs)

TYPICAL CHARACTERISTICS
18
I_DQ = 1400 mA
f = 1840 MHz
17
16
15
V_DD = 24 V
28 V
32 V
14
0
100
200
300
P_out, OUTPUT POWER (WATTS) CW
Figure 14. Power Gain versus Output Power
10⁹
10⁸
10⁷
10⁶
90
110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere²
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I_D2 for MTTF in a particular application.
Figure 15. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
1
Output Signal
Input Signal
0.1
0.01
0.001
0.0001
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 16. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−10
3.84 MHz
−20
Channel BW
−30
−40
−50
−60
−70
−80
−90
−ACPR in 3.84 MHz
Integrated BW
−100
−ACPR in 3.84 MHz
Integrated BW
−110
−9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9
f, FREQUENCY (MHz)
Figure 17. Single - Carrier W - CDMA Spectrum
MRF7S18170HR3 MRF7S18170HSR3
10
RF Device Data
Freescale Semiconductor