MC9S08GW64 Datasheet, PDF (12/38 Pages) Freescale Semiconductor, Inc – Covers: MC9S08GW64 and MC9S08GW32

Electrical Characteristics
The average chip-junction temperature (T_J) in °C can be obtained from:
T_J = T_A + (P_D × θ_JA)
Eqn. 1
where:
T_A = Ambient temperature, °C
θ_JA = Package thermal resistance, junction-to-ambient, °C/W
P_D = P_int + P_I/O
P_int = I_DD × V_DD, Watts — chip internal power
P_I/O = Power dissipation on input and output pins — user determined
For most applications, P_I/O << P_int and can be neglected. An approximate relationship between P_D and T_J (if P_I/O is neglected)
is:
P_D = K ÷ (T_J + 273°C)
Solving Equation 1 and Equation 2 for K gives:
Eqn. 2
K = P_D × (T_A + 273°C) + θ_JA × (P_D)²
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring P_D (at equilibrium)
for a known T_A. Using this value of K, the values of P_D and T_J can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of T_A.
3.5 ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be taken to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification, ESD stresses were performed for the human body model (HBM), the machine model (MM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless instructed otherwise in the device specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Human _{Series resistance}
Body Model
Storage capacitance
Number of pulses per pin
Charge
Device
Model
Series resistance
Storage capacitance
Number of pulses per pin
Latch-up Minimum input voltage limit
Maximum input voltage limit
Symbol
R1
C
—
R1
C
—
Value
1500
100
3
0
200
3
–2.5
7.5
Unit
Ω
pF
Ω
pF
V
V
MC9S08GW64 Series MCU Data Sheet, Rev. 1
12
PRELIMINARY-SUBJECT TO CHANGE WITHOUT NOTICE
Freescale Semiconductor