MRF5S21045 Datasheet, PDF (10/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

B
GATE LEAD
PACKAGE DIMENSIONS
E1
A
2X
E3
DRAIN LEAD
D1
D
4X
e
4X
b1
aaa ^M C A
2X
D2
c1
H
DATUM
PLANE
A1
A2
NOTE 7
4
D3
3
2X
E
F
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
ZONE J
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
A
2X
E2
E5
C
SEATING
PLANE
E4
ÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇÇ
E5
PIN 5
NOTE 8
1
2
CASE 1486 - 03
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
INCHES
DIM MIN MAX
A .100 .104
A1 .039 .043
A2 .040 .042
D .712 .720
D1 .688 .692
D2 .011 .019
D3 .600 − − −
E .551 .559
E1 .353 .357
E2 .132 .140
E3 .124 .132
E4 .270 − − −
E5 .346 .350
F
.025 BSC
b1 .164 .170
c1 .007 .011
e
.106 BSC
aaa
.004
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
MILLIMETERS
MIN MAX
2.54 2.64
0.99 1.09
1.02 1.07
18.08 18.29
17.48 17.58
0.28 0.48
15.24 − − −
14 14.2
8.97 9.07
3.35 3.56
3.15 3.35
6.86 − − −
8.79 8.89
0.64 BSC
4.17 4.32
0.18 0.28
2.69 BSC
0.10
BOTTOM VIEW
ISSUE C
TO - 270 WB - 4
MRF5S21045NR1(MR1)
MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1
10
RF Device Data
Freescale Semiconductor