MRF5S21045 Datasheet, PDF (1/12 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors

Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ = 500 mA,
P_out = 10 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF5S21045
Rev. 1, 7/2005
MRF5S21045NR1
MRF5S21045NBR1
MRF5S21045MR1
MRF5S21045MBR1
2170 MHz, 10 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S21045NR1(MR1)
CASE 1484 - 02, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S21045NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
P_D
- 0.5, +68
- 0.5, +15
130
0.74
Storage Temperature Range
Operating Junction Temperature
CW Operation
T_stg
- 65 to +150
T_J
200
CW
45
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(1,2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
R_θJC
1.35
1.48
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
W
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved. _{MRF5S21045NR1 MRF5S21045NBR1 MRF5S21045MR1 MRF5S21045MBR1}
RF Device Data
Freescale Semiconductor
1