MHV5IC2215NR2_07 Datasheet, PDF (10/19 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifier

TYPICAL N - CDMA DRIVER APPLICATION CHARACTERISTICS
44
0
40
V_DD = 28 Vdc, I_DQ1 = 145 mA, I_DQ2 = 105 mA, f1 = 1955 MHz
f2 = 1965 MHz, 2 x N−CDMA, 2.5 MHz Carrier Spacing
−6
36 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @
− 12
32 ^{0.01% Probability (CCDF)}
− 18
28
G_ps
− 24
24
− 30
20
− 36
16
− 42
12
8 ^IM3
4
PAE
ACPR
− 48
− 54
− 60
0
0.1
1
− 66
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 14. 2 - Carrier N - CDMA ACPR, IM3, Power
Gain and Power Added Efficiency
versus Output Power
31
50
G_ps
30
40
29
30
28
20
PAE
V_DD = 28 Vdc
27
I_DQ1 = 145 mA
10
I_DQ2 = 105 mA
f = 1960 MHz
26
0
0.1
1
10
30
P_out, OUTPUT POWER (WATTS) CW
Figure 15. Power Gain and Power Added
Efficiency versus Output Power
32
−2
24
S21
−4
16
−6
8
−8
0
− 10
−8 _{VDD = 28 Vdc}
P_out = 23 dBm CW
−16 _{IDQ1 = 145 mA}
I_DQ2 = 105 mA
− 24
1000
1500
S11
2000
2500
f, FREQUENCY (MHz)
− 12
− 14
− 16
3000
Figure 16. Broadband Frequency Response
MHV5IC2215NR2
10
RF Device Data
Freescale Semiconductor