MHV5IC2215NR2_07 Datasheet, PDF (1/19 Pages) Freescale Semiconductor, Inc – RF LDMOS Wideband Integrated Power Amplifier

Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC2215NR2 wideband integrated circuit is designed for base
station applications. It uses Freescale’s High Voltage (28 Volts) LDMOS IC
technology and integrates a two - stage structure. Its wideband on - chip
matching design makes it usable from 1500 to 2200 MHz. The linearity
performances cover all modulation formats for cellular applications including
TD - SCDMA.
Driver Application
• Typical Single - Carrier N - CDMA Performance: V_DD = 28 Volts, I_DQ1 =
164 mA, I_DQ2 = 115 mA, P_out = 23 dBm, Full Frequency Band (1930 -
1990 MHz), IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through
13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.5 dB
ACPR @ 885 kHz Offset — - 60 dBc in 30 kHz Bandwidth
• Typical Single - Carrier W - CDMA Performance: V_DD = 28 Volts, I_DQ1 =
164 mA, I_DQ2 = 115 mA, P_out = 23 dBm, Full Frequency Band (2130 -
2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 24 dB
ACPR @ 5 MHz Offset — - 55 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
Features
• On - Chip Matching (50 Ohm Input, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror g_m Reference FET for Self Biasing Application ⁽¹⁾
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel
V_RD1
V_RG1
V_DS1
RF_in
2 Stage IC
V_DS2/RF_out
V_GS1
Quiescent Current
Temperature Compensation
V_GS2
Figure 1. Block Diagram
Document Number: MHV5IC2215N
Rev. 3, 1/2007
MHV5IC2215NR2
2170 MHz, 23 dBm, 28 V
SINGLE N - CDMA, SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
N.C. 1
V_RD1 2
V_RG1 3
V_DS1 4
GND 5
RF_in 6
V_GS1 7
V_GS2 8
16 N.C.
15 ^VDS2^/RFout
14 ^VDS2^/RFout
13 ^VDS2^/RFout
12 ^VDS2^/RFout
11 ^VDS2^/RFout
10 V_DS2/RF_out
9 ^N.C.
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MHV5IC2215NR2
1