34701_07 Datasheet, PDF (10/38 Pages) Freescale Semiconductor, Inc – 1.5 A Switch-Mode Power Supply with Linear Regulator

ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions -40°C ≤ T_A ≤ 85°C unless otherwise noted. Input voltages VIN1 = VIN2 = 3.3 V using
the typical application circuit (see Figure 33) unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LINEAR REGULATOR (LDO)
LDO Feedback Voltage ⁽¹⁶⁾
VIN1 = VIN2 = 2.8 V to 6.0 V, ILDO = 10 mA to 1000 mA. Includes Load
Regulation Error
V _LFB
LDO Voltage Margining Step Size
LDO Voltage Margining Highest Positive Value
LDO Voltage Margining Lowest Negative Value
LDO Line Regulation ⁽¹⁶⁾
VIN1 = VIN2 = 2.8 V to 6.0 V, ILDO = 1000 mA
LDO Load Regulation ⁽¹⁶⁾
ILDO = 10 mA to 1000 mA
LDO Ripple Rejection, Dropout Voltage ⁽¹⁶⁾
VDO = 1.0 V, VRIPPLE = +1.0 V p-p
Sinusoidal, f = 300 kHz, ILDO = 500 mA ⁽¹⁵⁾
LDO Maximum Dropout Voltage (VIN - VLDO), using IRL2703 ⁽¹⁶⁾
VLDO = 2.5 V, ILDO = 1000 mA
V _MLDO
V _MP
V _MN
REG_LNVLDO
REG_LDVLDO
V_{LDO_RR}
V_DO
LDO Current Sense Comparator Threshold Voltage (VCS - VLDO)
LDO Pin Input Current, VLDO = 5.25 V
LDO Feedback Input Current (LFB Pin), VLFB = 0.8 V
LDO Drive Output Current (LDRV Pin), VLDRV = 0 V
CS Pin Input Leakage Current
VCS = 5.25 V
V_CSTH
I _LDO
I _LFB
I _LDRV
I _CSLK
LDO Pulldown MOSFET Q4 Current Limit
T_A = 25°C, VBST = 8.0 V (LDO Pin)
I _LIMQ4
LDO Pulldown MOSFET Q4 RDS(ON)
ID = 1.0 A, VBST = 8.0 V
R_DS(ON)Q4
LDO Recommended Output Capacitance
C_LDO
LDO Recommended Output Capacitor ESR
Thermal Shutdown (LDO Pull-down MOSFET Q4) ⁽¹⁵⁾
Thermal Shutdown Hysteresis ⁽¹⁵⁾
R_LDO
T_SD
T_SDHYS
Notes
15. Design information only. This parameter is not production tested.
16. IDO refers to Load Current on External LDOFET - IRL2703 is the Intersil MOSFET.
0.784
–
5.9
-7.9
-1.0
-1.0
–
–
35
1.0
-1.0
-5.0
50
0.75
–
–
–
150
–
0.800
1.0
–
–
–
–
40
50
50
1.9
–
-3.3
–
–
–
10
5.0
170
10
V
0.816
–
%
7.9
%
-5.9
%
%
1.0
%
1.0
dB
–
mV
75
65
mV
4.0
mA
1.0
µA
-2.0
mA
µA
200
A
2.0
Ω
1.9
–
µF
–
mΩ
190
°C
–
°C
34701
10
Analog Integrated Circuit Device Data
Freescale Semiconductor