BTB06 Datasheet, PDF (3/8 Pages) Sirectifier Semiconductors – Discrete Triacs(Non-Isolated/Isolated)

BTB06
Rev.E Mar.-2016
DATA SHEET
电性能参数 / Electrical Characteristics(Ta=25℃)
标准（4象限） / Standard（4 quadrants)
符号
Symbol
I_GT(1)
V_GT
V_GD
I_H(2)
I_L
(dV/dt)⁽²⁾
(dV/dt)c⁽²⁾
测试条件
Test Conditions
V_D=12V R_L=30Ω
信号区
Quadra
nt
I-II-III
IV
V_D=12V R_L=30Ω
ALL
V_D=V_DRM R_L=3.3KΩ
T_j=125℃
ALL
I_T=500mA
I_G=1.2I_GT
I-III- IV
II
V_D=67% V_DRM gate open T_j=125℃
(dI/dt)c=2.7A/ms
T_j=125℃
Max.
Max.
Min.
Max.
Max.
Min.
Min.
Note 1：minimum I_GT is guaranted at 5% of I_GT max.
Note 2：for both polarities of A2 referenced to A1.
BTB06
C
B
25
50
50
100
1.3
0.2
25
50
40
50
80
100
200
400
5.0
10
单位
Unit
mA
V
V
mA
mA
V/μs
电性能参数 / Electrical Characteristics(Ta=25℃)
符号
Symbol
V_TM(2)
V_to(2)
R_d(2)
I_DRM
I_RRM
测试条件
Test Conditions
I_TM=8.5A t_p =380μs T_j=25℃
Threshold voltage T_j=125℃
Dynamic resistance T_j=125℃
V_DRM = V_RRM
T_j=25℃
T_j=125℃
Note 2：for both polarities of A2 referenced to A1.
Max.
Max.
Max.
Max.
Max.
数值
Value
1.55
0.85
60
5.0
1.0
单位
Unit
V
V
mΩ
μA
mA
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