BTB06 Datasheet, PDF (2/8 Pages) Sirectifier Semiconductors – Discrete Triacs(Non-Isolated/Isolated)

BTB06
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
RMS on-state current(full sine wave
T_C=105℃)
Non repetitive surge peak on-state
current(full cycle, T_j initial = 25 °C)
Non repetitive surge peak on-state
current(full cycle, T_j initial = 25 °C)
I^2t Value for fusing
Critical rate of rise of on-state current I_G
2xI_GT t_r ≤100 ns（F=120Hz T_j=125℃）
Peak gate current(t_p =20μs T_j=125℃)
Average gate power dissipation(T_j=125℃)
Operating junction temperature range
Storage junction temperature range
Junction to ambient
Junction to case (AC)
符号
Symbol
V_DRM/V_RRM
I_T(RMS)
I_TSM(F=50Hz
t=20ms)
I_TSM(F=60Hz
t=16.7ms)
I²t_(tp=10ms)
dI/dt
I_GM
P_G(AV)
T_j
T_stg
R_th(j-a)
R_th(j-c)
数值
Rating
600 and 800
6.0
60
63
21
50
4.0
1.0
-40～125
-40～150
60
2.7
单位
Unit
V
A
A
A
A²s
A/μs
A
W
℃
℃
℃ /W
℃ /W
电性能参数 / Electrical Characteristics(Ta=25℃)
免缓冲器和逻辑电平（3 象限） / Snubberless and logic level（3 quadrants)
符号
测试条件
信号区
BTB06
单位
Symbol
Test Conditions
Quadrant
TW SW CW BW Unit
I_GT(1)
V_D=12V R_L=30Ω
I-II-III
Max. 5
10 35 50 mA
V_GT
V_D=12V R_L=30Ω
V_GD
V_D=V_DRM R_L=3.3KΩ
T_j=125℃
I_H(2)
I_T=100mA
I-II-III
I-II-III
Max.
Min.
Max. 10
1.3
0.2
15 35
V
V
50 mA
I_L
I_G=1.2I_GT
I-III
10 25 50 70
Max.
mA
II
15 30 60 80
(dV/dt)⁽²⁾ V_D=67% V_DRM gate open T_j=125℃
Min. 20 40 400 1000 V/μs
(dI/dt)c⁽²⁾
(dV/dt)c=0.1V/μs T_j=125℃
(dV/dt)c=10V/μs T_j=125℃
Min. 2.7 3.5
-
Min. 1.2 2.4
-
-
- A/m s
Without snubber T_j=125℃
Min.
-
-
3.5 5.3
Note 1：minimum I_GT is guaranted at 5% of I_GT max.
Note 2：for both polarities of A2 referenced to A1.
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