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BU406M Datasheet, PDF (2/7 Pages) Foshan Blue Rocket Electronics Co.,Ltd. – Silicon NPN transistor in a TO-220 Plastic Package.
BU406M
Rev.F Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Current(Pulse)
Base Current – Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
DATA SHEET
数值
Rating
300
120
6
7
10
2
60
150
-55~150
单位
Unit
V
V
V
A
A
A
W
℃
℃
电性能参数 / Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector Cut-Off Current
符号
Symbol
ICES(1)
ICES(2)
ICES(3)
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Turn-Off Time
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
toff
测试条件
Test Conditions
VCE=300V VBE=0
VCE=250V
VCE=250V
TC=150℃
VCE=120V
VBE=0
VBE=0
IB=0
VBE=6.0V IC=0
VCE=5.0V IC=2.0A
VCE=5.0V IC=5.0A
IC=5.0A
IB=0.5A
IC=5.0A
VCE=10V
IC=5.0A
IB=0.5A
IC=0.5A
IB=0.5A
最小值 典型值 最大值 单位
Min Typ Max Unit
100 μA
50 μA
500 μA
100 μA
1.0 mA
60
120
40
0.5 V
1.25 V
10
MHz
0.7 μS
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