FMSBSS123 Datasheet, PDF (3/7 Pages) Formosa MS – N-Channel Power MOSFET

N-Channel Power MOSFET
FMSBSS123
Formosa MS
Electrical characteristics (At T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Off Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
VGS = 0V, ID= 250uAdc
VGS = 0V, VDS = 100Vdc, TJ = 25^OC
VGS = 0V, VDS = 100Vdc, TJ = 125^OC
VGS = 20Vdc, VDS=0
On Characteristics *4
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
Dynamic Characteristics
Intput capacitance
Output capacitance
Reverse transfer capacitance
Switching Characteristics *4
Turn-On Delay Time
Turn-Off Delay Time
Reverse Diode
Diode forward on-voltage
*4: Pulse Test: Pulse Width ≤300us, Duty Cycle ≤2.0%
VDS = VGS, ID = 1.0mAdc
VGS = 10Vdc, ID = 100mAdc
VDS =25Vdc, ID =100mAdc
VDS = 25Vdc, VGS = 0V,
f=1.0MHz
VCC = 30Vdc, RGS=50Ω
IC=0.28Adc, VGS=10Vdc
VGS =0Vdc, ID = 0.34Adc, TJ =25^OC,
Symbol
MIN. TYP. MAX. UNIT
BVDSS
IDSS
IGSS
100
Vdc
15
µAdc
60
50
nAdc
VGS(th)
0.8
RDS(ON)
gfs
80
2.8
Vdc
5.0
6.0
Ω
mmhos
Ciss
Coss
Crss
20
9.0
pF
4.0
td(on)
20
ns
td(off)
40
VSD
1.3
V
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Page 3
Document ID Issued Date
DS-231146 2009/08/10
Revised Date Revision
2011/07/21
C
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