FMSBSS123 Datasheet, PDF (2/7 Pages) Formosa MS – N-Channel Power MOSFET

N-Channel Power MOSFET
FMSBSS123
100V N-Channel Enhancement
Mode Power MOSFET
Features
• Low on-resistance R_DS(ON) = 6.0Ω
• Low input capacitance : 20pF
• Fast switching speed : 20ns
• Low output capacitance : 9pF
• Low threshole : 2.8V
• In compliance with EU RoHS 2002/95/EC directives
• Suffix "-H" indicates Halogen-free part, ex.FMSBSS123-H
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Formosa MS
Package outline
SOT-23
(B)
(C)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
Symbol
MIN. TYP. MAX. UNIT
Drain-source voltage
V_DSS
100
Vdc
Drain current-Continuous *1
I_D
-pulsed*2
I_DM
170
mAdc
680
Gate- source voltage-Continuous
Non-repetitive (tp≤50us)
Total Device Dissipation FR-5
Board *3
TA=25°C
Derate above 25°C
Typical Thermal resistance junction to ambient
Operation junction temperature
Storage temperature
V_GS
V_GSM
P_D
R_θJA
T_J
T_STG
±20
±40
225
Vdc
Vpk
mW
1.8
mW/°C
556
o
C/W
-55
+150
o
C
o
-55
+150
C
*1: The Power Dissipation of the package may result in a lower continuous drain current.
*2: Pulse Width ≤ 300us, Duty Cycle ≤ 2.0%
*3: FR-5=1.0x0.75x0.062 in.
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Page 2
Document ID Issued Date
DS-231146 2009/08/10
Revised Date Revision
2011/07/21
C
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