FMS2301 Datasheet, PDF (3/8 Pages) Formosa MS – 20V P-Channel Enhancement Mode MOSFET

SMD MOSFET
FMS2301
Formosa MS
Electrical characteristics (At T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
STATIC
Symbol
Drain-source breakdown voltage
VGS = 0V, ID= -250uA
BVDSS
Zero gate voltage drain current
Gate-body leakage current-forward
Gate-body leakage current-reverse
Gate threshold voltage
Static drain-source on-resistance^a
Diode Forward Voltage
VDS = -20V, VGS = 0V, TJ = 25^OC
VGS = 8V, VDS=0
VGS = -8V, VDS=0
VDS = VGS, ID = -250uA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID= -2.0A
VGS =0V, IS = -1.0A, TJ =25^OC
IDSS
IGSSF
IGSSR
VGS(th)
RDS(ON)
VSD
DYNAMIC
Intput capacitance
Output capacitance
Reverse transfer capacitance
VDS = -15V, VGS = 0V,
f=1.0MHz
Ciss
Coss
Crss
Total gate charge
Gate-source charge
Gate-drain charge
Turn-On Delay Time
Turn-Off Delay Time
VDS = -6.0V, ID = -2.8A
VGS=-4.5V
VDS = -6.0V,RL=6.0Ω, RGEN=6Ω
VGS=-4.5V
Q_g
Q_gs
Q_gd
Td(on)
Tr
Td(off)
Tf
Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing.
MIN.
-20
-0.4
TYP.
90
110
-0.7
510
53
17
5.8
1.7
1.2
53
32
47
7
MAX. UNIT
V
-1.0
μA
100
nA
-100
nA
-1.0
V
110
150
mΩ
-1.4
V
pF
nC
ns
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Page 3
Document ID Issued Date
DS-231129 2009/02/10
Revised Date
2011/07/21
Revision
C
Page.
8