FMS2301 Datasheet, PDF (2/8 Pages) Formosa MS – 20V P-Channel Enhancement Mode MOSFET

SMD MOSFET
FMS2301
20V P-Channel Enhancement
Mode MOSFET
Features
• R_DS(ON) ≦110mΩ@V_GS=-4.5V
• R_DS(ON) ≦150mΩ@V_GS=-2.5V
• Super high density cell design for extremely low R_DS(ON)
• In compliance with EU RoHS 2002/95/EC directives.
• Suffix "-H" indicates Halogen-free part, ex.FMS2301-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Formosa MS
Package outline
SOT-23
(B)
(C)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Drain-source voltage
Drain current-continue
-pulsed
T_A = 25^OC
T_A = 70^OC
Gate- source voltage-continue
Maximum power dissipation
T_A = 25^OC
T_A = 70^OC
Thermal resistance-junction to ambient*
Operation junction temperature
Storage temperature
* The device mounted on 1in² FR4 board with 2 oz copper
Symbol
V_DSS
I_D
I_DM
V_GS
P_D
R_θJA
T_J
T_STG
Limit
-20
-2.7
-2.1
-11
±8.0
1.3
0.8
100
-55 to +150
-65 to +150
UNIT
V
A
V
W
o_C/W
o_C
o_C
http://www.formosams.com/
TEL:[phone]
FAX:[phone]
Page 2
Document ID Issued Date
DS-231129 2009/02/10
Revised Date Revision
2011/07/21
C
Page.
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