FMBT5550 Datasheet, PDF (3/8 Pages) Formosa MS – 600mA Silicon NPN Epitaxial Planar Transistor

High Voltage NPN Epitaxial Planar Transistor
FMBT5550 / FMBT5551
Formosa MS
Characteristics (AT T_A=25^oC unless otherwise noted)
Off characteristics
PARAMETER
Collector-Base breakdown voltage
CONDITIONS
I_c = -100µAdc, I_E = 0
I_c = 1.0mAdc, I_B = 0
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Collector cutoff current
Emitter cutoff current
I_E = 10µAdc, I_C = 0
V_CB = 100Vdc, I_E = 0
V_CB = 120Vdc, I_E = 0
V_CB = 100Vdc, I_E = 0, T_A = 100^OC
V_CB = 100Vdc, I_E = 0, T_A = 100^OC
V_EB = 4.0Vdc, I_C = 0
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
Types
FM5550
FM5551
FM5550
FM5551
Both Types
FM5550
FM5551
FM5550
FM5551
Both Types
Min.
160
180
140
160
6.0
-
-
-
-
-
Max.
-
-
-
-
-
100
50
100
50
50
UNIT
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
On characteristics(3)
PARAMETER
CONDITIONS
I_c = 1.0mAdc, V_CE = 5.0Vdc
DCcurrent gain
I_c = 10mAdc, V_CE = 5.0Vdc
I_c = 50mA, V_CE = 10Vdc
I_c = 10mAdc, I_B = 1.0mAdc
Collector-Emitter saturation voltage(3) I_c = 50mAdc, I_B = 5.0mAdc
Base-Emitter saturation voltage(3)
I_c = 10mAdc, I_B = 1.0mAdc
I_c = 50mAdc, I_B = 5.0mAdc
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
Symbol
h_FE
V_CE(sat)
V_BE(sat)
Types
FM5550
FM5551
FM5550
FM5551
FM5550
FM5551
Both Types
FM5550
FM5551
Both Types
FM5550
FM5551
Min.
60
80
60
80
20
30
-
-
-
-
-
-
Max.
-
-
250
250
-
-
0.15
0.25
0.20
1.0
1.2
1.0
UNIT
-
Vdc
Vdc
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Page 3
Document ID Issued Date
DS-231108 2008/02/10
Revised Date Revision
2011/07/21
C
Page.
8