FMBT5550 Datasheet, PDF (2/8 Pages) Formosa MS – 600mA Silicon NPN Epitaxial Planar Transistor

High Voltage NPN Epitaxial Planar Transistor
FMBT5550 / FMBT5551
Formosa MS
600mA Silicon NPN Epitaxial Planar
Transistor
Features
• High collector-emitterbreakdien voltage.
(BV_CEO = 140V~ 160V@I_C=1mA)
• This device is designed for general purpose high voltage
amplifiers and gas discharge display driving.
• Epitaxial planar die construction.
• Complememntary PNP type available (FMBT5401)
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT5550-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Package outline
SOT-23
(B)
(C)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Thermal Characteristics
Characteristics
CONDITIONS
Total device dissipation FR-5 board ^{TA = 25OC}
(1)
Derate above 25^OC
Thermal resistance
Total device dissipation alumina
substrate(2)
Junction to ambient
T_A = 25^OC
Derate above 25^OC
Thermal resistance
Operating temperature
Junction to ambient
Storage temperature
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.formosams.com/
TEL:[phone]
FAX:[phone]
Page 2
Symbol FMBT5550
FMBT5551
V_CBO
V_CEO
V_EBO
I_C
160
180
140
160
6.0
600
UNIT
Vdc
Vdc
Vdc
mAdc
Symbol
P_D
P_D
R_θJA
P_D
P_D
R_θJA
T_J
T_STG
Maximum
225
1.8
556
300
2.4
417
-55 ~ +150
-65 ~ +150
UNIT
mW
mW/^OC
O_C/W
mW
mW/^OC
O_C/W
o_C
Document ID Issued Date
DS-231108 2008/02/10
Revised Date Revision
2011/07/21
C
Page.
8