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| FMBT5401 Datasheet, PDF (3/9 Pages) Formosa MS – High Voltage PNP Transistor | |||
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High Voltage PNP Silicon Transistor
FMBT5401
Formosa MS
Electrical Characteristics (AT TA=25oC unless otherwise noted)
OFF characteristics
PARAMETER
CollectorâBase Breakdown Voltage
CONDITIONS
IC=- 100uAdc,IE= 0
Symbol
V(BR)CBO
CollectorâEmitter Breakdown Voltage
EmitterâBase Breakdown Voltage
IC=- 1.0mAdc,IB= 0
IE = -10uAdc, IC = 0
V(BR)CEO
V(BR)EBO
Collector Cutoff Current
VCB = -120Vdc, IE = 0
VCB = -120Vdc, IE = 0,TA=100°C
ICES
ON characteristics
PARAMETER
DC Current Gain
CollectorâEmitter Saturation Voltage
BaseâEmitter Saturation Voltage
CONDITIONS
IC =- 1.0mAdc, VCE = -5.0Vdc
IC =- 10mAdc, VCE = -5.0Vdc
IC =- 50mAdc, VCE = -5.0Vdc
IC = -10mAdc, IB = -1.0mAdc
IC = -50mAdc, IB = -5.0mAdc
IC = -10mAdc, IB = -1.0mAdc
IC = -50mAdc, IB = -5.0mAdc
Symbol
hFE
VCE(sat)
VBE(sat)
SmallâSiglal characteristics
PARAMETER
Current-Gain-Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
CONDITIONS
IC =- 10mAdc, VCE = -10Vdc,
f=100MHz
VCB=-10Vdc,IE =0, f=1.0MHz
IC =- 1.0mAdc, VCE = -10Vdc,
f=1.0KHz
IC =- 200uAdc, VCE = -5.0Vdc,
RS=10Ω,f=1.0KHz
Symbol
fT
Cobo
hfe
NF
Min.
-160
-150
-5.0
Min.
50
60
50
Min.
100
40
Max.
-50
-50
UNIT
Vdc
Vdc
Vdc
nAdc
uAdc
Max. UNIT
240
-
-0.2
-0.5
Vdc
-1.0
-1.0
Vdc
Max.
300
6.0
200
8.0
UNIT
MHZ
pF
-
dB
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID Issued Date Revised Date Revision
DS-231166 2011/01/05 2011/07/21
B
Page.
9
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