FMBT5401 Datasheet, PDF (2/9 Pages) Formosa MS – High Voltage PNP Transistor

High Voltage PNP Silicon Transistor
FMBT5401
High Voltage PNP Transistor
Features
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" dinicates Halogen-free part, ex.FMBT5401-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Formosa MS
Package outline
SOT-23
(B)
(C)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector −Base Voltage
Collector −Emitter Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
-160
-150
-5.0
-500
UNIT
Vdc
Vdc
Vdc
mAdc
Thermal Characteristics
Characteristics
CONDITIONS
Total device dissipation FR-5 board ^{TA = 25OC}
(1)
Derate above 25^OC
Thermal resistance
Total device dissipation alumina
substrate(2)
Junction to ambient
T_A = 25^OC
Derate above 25^OC
Thermal resistance
Operating temperature
Junction to ambient
Storage temperature
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Symbol
P_D
P_D
R_θJA
P_D
P_D
R_θJA
T_J
T_STG
Max
225
1.8
556
300
2.4
417
-55 ~ +150
-55 ~ +150
UNIT
mW
mW/^OC
O_C/W
mW
mW/^OC
O_C/W
o_C
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Page 2
Document ID Issued Date Revised Date Revision
DS-231166 2011/01/05 2011/07/21
B
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