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FMBT3904_17 Datasheet, PDF (3/11 Pages) Formosa MS – SMD NPN Transistor
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SMD NPN Transistor
FMBT3904
Formosa MS
Electrical characteristics (AT TA=25oC unless otherwise noted)
Off characteristics
PARAMETER
CONDITIONS
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
Base cutoff current
Collector cutoff current
IC = 10uA, IE = 0
IC = 1mA, IB = 0
IE = 10uA, IC = 0
VCE = 30V, VEB = 3.0V
VCE = 30V, VEB = 3.0V
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IBL
ICEX
MIN.
60
40
6.0
TYP. MAX. UNIT
V
V
V
50 nA
50 nA
On characteristics(3)
PARAMETER
CONDITIONS
IC = 0.1mA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
DC current gain
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter saturation voltage(3)
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter saturation voltage(3)
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
3.Pulse test : pukse width < 300us, duty cycle < 2.0%.
Symbol MIN. TYP. MAX. UNIT
40
70
hFE
100
300 -
60
30
VCE(sat)
0.2
V
0.3
VBE(sat)
0.65
0.85
V
0.95
Small-signal characteristics
PARAMETER
Current-gain-bandwidth product
Output capacitance
Input capacitance
Input impedance
Voltage feeback radio
Small-signal current gain
Output admittance
Noise figure
CONDITIONS
Symbol
IC = 10mA, VCE = 20V, f = 100MHz
fT
VCB = 5.0V, IE = 0, f = 1.0MHz
Cobo
VEB = 0.5V, IC = 0, f = 1.0MHz
Cibo
VCE = 10V, IC = 1.0mA, f = 1.0KHz
hie
VCE = 10V, IC = 1.0mA, f = 1.0KHz
hre
VCE = 10V, IC = 1.0mA, f = 1.0KHz
hfe
VCE = 10V, IC = 1.0mA, f = 1.0KHz
hoe
VCE = 5.0V, IC = 100uA, Rs = 1.0K ohms, f = 1.0KHZ NF
MIN.
300
1.0
0.5
100
1.0
TYP. MAX. UNIT
MHz
4.0 pF
8.0 pF
10
8.0
400
40
5.0
kohms
x 10-4
-
umhos
dB
Switching characteristics
PARAMETER
Delay time
Rise time
Storage time
Fall time
CONDITIONS
VCC = 3.0V, VBE = -0.5V, IC = 10mA, IB1 = 1.0mA
VCC = 3.0V, IC =10mA, IB1 = IB2 = 1.0mA
Symbol
td
tr
ts
tf
MIN.
TYP.
MAX. UNIT
35
35
ns
200
50
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Page 3
Document ID Issued Date
DS-231106
2008/02/10
Revised Date
2012/01/11
Revision
F
Page.
11
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