FMBT3904_17 Datasheet, PDF (2/11 Pages) Formosa MS – SMD NPN Transistor

SMD NPN Transistor
FMBT3904
200mA Silicon NPN Epitaxial Planar
Transistor
Features
• High collector-emitterbreakdien voltage.
(BV_CEO 40V Min.@I_C=1mA)
• Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
• Capable of 225mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free part, ex. FMΒΤ3904-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Formosa MS
Package outline
SOT-23
(B)
(C)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation FR-5 board
(Note 1)
T_A = 25^OC
Derate above 25^OC
Thermal resistance(Note 1)
Junction to ambient
Thermal resistance(Note 1)
Junction to case
Total device dissipation alumina
substrate(Note 2)
T_A = 25^OC
Derate above 25^OC
Thermal resistance(Note 2)
Junction to ambient
Thermal resistance(Note 2)
Junction to case
Operating junction temperature range
Storage temperature range
Note 1: FR-5 = 1.0 X 0.75 X0.062 in.
2: Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
R_θJA
R_θJC
P_D
R_θJA
R_θJC
T_J
T_STG
MIN.
-55
-55
TYP. MAX. UNIT
60
V
40
V
6.0 V
200 ^mA
225 ^mW
1.8 ^mW/OC
556 ^OC/W
300 ^OC/W
300 ^mW
2.4 ^mW/OC
417 ^OC/W
225 ^OC/W
+150 ^oC
+150 ^o_C
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Page 2
Document ID Issued Date
DS-231106
2008/02/10
Revised Date
2012/01/11
Revision
F
Page.
11