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| FMBT2907AW Datasheet, PDF (3/9 Pages) Formosa MS – PNP SMD Transistor | |||
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PNP SMD Transistor
FMBT2907AW
Formosa MS
Electrical characteristics (AT TA=25oC unless otherwise noted)
Off characteristics
PARAMETER
CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage (3)
Emitter-base breakdown voltage
Collector cutoff current
Base cutoff current
On characteristics (3)
Ic = -10uA, IE = 0
Ic = -10mA, IB = 0
IE = -10uA, IC = 0
VCE = -30Vdc, VEB(off) = -0.5Vdc
VCE = -30Vdc, VEB(off) = -0.5Vdc
PARAMETER
CONDITIONS
Dc current gain
Collector-emitter
Saturation voltage
Base-emitter
Saturation voltage
Ic = -0.1mA, VCE = -10V
Ic = -1.0mA, VCE = -10V
Ic = -10mA, VCE = -10V
Ic = -150mA, VCE = -10V
Ic = -500mA, VCE = -10V
Ic = -150mA, IB = -15mA
Ic = -500mA, IB = -50mA
Ic = 150mA, IB = -15mA
Ic = 500mA, IB = -50mA
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
Symbol
hFE
VCE(sat)
VBE(sat)
Small-signal characteristics
PARAMETER
CONDITIONS
Symbol
Current-gain-bandwidth product (4)
IC = -50mA, VCE = -20V, f = 100MHz
fT
Output capacitance
VCB = -10V, IE = 0, f = 1.0MHz
Cobo
Input capacitance
VEB = -2V, IC = 0, f = 1.0MHz
Cibo
3. Pulse test: pulse widthâ¦300μs, duty cycle ⦠2.0%
4. fT is defined as the frequency at which hfe extrapolates to unity.
Min.
-60
-60
-5.0
Min.
75
100
100
100
50
Min.
200
Switching characteristics
PARAMETER
Turn-on time
Delay time
Rise time
Turn-out time
Storage time
Fall time
CONDITIONS
VCC = -30V, IC = -150mA, IB1 = -15mA
VCC = -6V, IC = -150mA, IB1 =IB2= -15mA
Symbol
ton
td
tr
toff
ts
tf
Min.
Max.
-50
-50
UNIT
V
V
V
nA
Max.
UNIT
300
-0.4
V
-1.6
-1.3
V
-2.6
Max.
8.0
30
UNIT
MHz
pF
pF
Max.
45
10
40
280
225
60
UNIT
ns
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 3
Document ID Issued Date
DS-231134 2009/08/10
Revised Date Revision
2010/03/10
B
Page.
9
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