FMBT2907AW Datasheet, PDF (2/9 Pages) Formosa MS – PNP SMD Transistor

PNP SMD Transistor
FMBT2907AW
Formosa MS
600mA General Purpose Transistor
PNP Silicon
Features
• High collector-emitter breakdown voltage
(BV_CEO = -60V@I_C=-10mA)
• PNP silicon epitaxial planar transistor, is designed for general
purpose and amplifier applications.
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT2907AW-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-323
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.006 gram
Package outline
SOT-323
(B)
(C)
(A)
0.054 (1.35)
0.046 (1.15)
0.096 (2.40)
0.080 (2.00)
0.021 (0.53)
0.017 (0.42)
0.040 (1.00)
0.032 (0.80)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current - continuous
Total device dissipation FR-5 board, (1) TA = 25°C
Thermal resistance junction to ambient
Operating junction temperature range
Storage temperature range
1.FR-5 = 1.0 X 0.75 X0.062 in.
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
R_θJA
T_J
T_STG
FMBT2907AW
-60
-60
-5.0
-600
150
833
-55 to +150
-55 to +150
UNIT
V
V
V
mA
mW
O_C/W
o_C
o_C
http://www.formosams.com/
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FAX:[phone]
Page 2
Document ID Issued Date
DS-231134 2009/08/10
Revised Date
2010/03/10
Revision
B
Page.
9