FMBSS84 Datasheet, PDF (3/8 Pages) Formosa MS – 50V P-Channel Enhancement Mode Power MOSFET

SMD MOSFET
FMBSS84
Formosa MS
Electrical characteristics (At T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
OFF CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current-forward
Gate-body leakage current-reverse
VGS = 0V, ID= -250uA
VDS = 25V, VGS = 0V
VDS = 50V, VGS = 0V
VGS = 20V, VDS=0
VGS = -20V, VDS=0
ON CHARACTERISTICS (Note 1)
Gate threshold voltage
VDS = VGS, ID = 1.0mA
Static drain-source on-resistance
VGS = 5.0V, ID = 100mA
Symbol
MIN. TYP. MAX. UNIT
BVDSS
50
IDSS
IGSSF
IGSSR
V
0.1
µA
15
60
uA
-60
uA
VGS(th)
0.8
2.0
V
RDS(ON)
5.0
10
Ω
Source-drain current
IS
Source-drain current (pulse), Note 2
ISM
Forward transconductance, Note 1
Forward on voltage, Note 1
DYNAMIC CHARACTERISTICS
Intput capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-On Delay Time
Turn-Off Delay Time
VDS =25V, ID = 100mA, f = 1kHz*
VDS = 5V, VGS = 0V,
f=1.0MHz
VDD = -15V,RL=50Ω, ID=-2.5A
gFS
50
VSD
Ciss
Coss
Crss
QT
td(ON)
tr
td(OFF)
tf
Note 1. Pulse duration >= 300µs, duty cycle 2.0%
2. Pulse width limited by Max. junction temperature
3. Surface mounted on 1 inch square copper pad of FR4 board; 270°C/W when mounted on min. copper pad.
0.130
A
0.520
A
ms
2.5
V
30
10
pF
5.0
6000
pC
25
1.0
ns
16
8
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Page 3
Document ID Issued Date
DS-231142 2009/08/10
Revised Date Revision
2011/07/21
C
Page.
8