FMBSS84 Datasheet, PDF (2/8 Pages) Formosa MS – 50V P-Channel Enhancement Mode Power MOSFET

SMD MOSFET
FMBSS84
50V P-Channel Enhancement
Mode Power MOSFET
Features
• Low on-resistance R_DS(ON) = 10Ω
• Low input capacitance : 30pF
• Fast switching speed : 2.5ns
• Low output capacitance : 10pF
• Low threshole : 2.0V
• In compliance with EU RoHS 2002/95/EC directives
• Suffix "-H" indicates Halogen-free part, ex.FMBSS84-H
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Formosa MS
Package outline
SOT-23
(B)
(C)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.051 (1.30)
0.035 (0.89)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Drain-source voltage
Drain current-continue
-pulsed
T_A = 25^OC
Gate- source voltage-continue
Total power dissipation (Derate above 25^OC)
Junction to ambient thermal resistance
Operation junction temperature
Storage temperature
Symbol
V_DSS
I_D
I_DM
V_GS
P_D
R_θJA
T_J
T_STG
MIN.
-55
-65
TYP.
MAX.
50
130
520
±20
225
556
+150
+150
UNIT
V
mA
V
mW
o
C/W
o
C
o
C
http://www.formosams.com/
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FAX:[phone]
Page 2
Document ID Issued Date
DS-231142 2009/08/10
Revised Date Revision
2011/07/21
C
Page.
8