U054BT2510 Datasheet, PDF (2/7 Pages) Formosa MS – SMD Ultra Low Capacitance ESD Protection Array

SMD Ultra Low Capacitance ESD Protection Array
U054BT2510
4-Channel Ultra Low Capacitance ESD
Protection Diodes Array- 5.0V
Formosa MS
Features
• 4 channels of ESD protection
• Provide transient protection:
IEC 61000-4-2 (ESD) level 4
IEC 61000-4-4 (EFT) 80A (5/50ns)
IEC 61000-4-5 (Surge) (8/20us)
• Channel I/O to GND capacitance: 0.6pF(Max.)
• Channel I/O to I/O capacitance: 0.3pF(Max.)
• Low clamping voltage
• Low operating voltage
• Improved zener structure
• Optimized package for easy high speed data lines PCB layout
• RoHS compliant
• Suffix "-H" indicates Halogen-free parts, ex. U054BT2510-H.
Applications
• HDMI / DVI ports
• Display port interface
• 10M / 100M / 1G ethernet
• USB 2.0 interface
• VGA interface
• Set-top box
• Flat panel monitors / TVs
• PC / note book
Package outline
T2510P10
0.100(2.55)
0.096(2.45)
0.041(1.05)
0.037(0.95)
0.006(0.152)Typ.
0.002(0.05)
0.000(0.00)
0.020(0.50)Typ.
0.019(0.47)
0.014(0.37)
0.023(0.58)
0.019(0.48)
0.017(0.43)
0.013(0.33)
0.022(0.56)
0.018(0.46)
0.011(0.27)
0.007(0.17)
Mechanical data
• Flammability Rating: UL 94V-0
Dimensions in inches and (millimeters)
• Terminal: Matte tin plated
• Case : Molded plastic, T2510P10
• Mounting Position : Any
• Weight : 3.8 Millgrams (Approximate)
Maximum ratings (at T_A=25^oC unless otherwise noted)
Parameter
Symbol
Ratings
Unit
Peak pulse power (8/20us)
PPP
75
W
Peak pulse current IEC 61000-4-5(8/20us) IPP
5.0
A
ESD per IEC 61000-4-2(air)
VESD
±15
kV
ESD per IEC 61000-4-2(contact)
VESD
±8.0
kV
Operating junction temperature range
TJ
-55 to +125
o_C
Storage temperature range
TSTG
-55 to +150
o_C
Electrical characteristics (at T_A=25^oC unless otherwise noted)
Parameter
Conditions
Symbol
Reverse stand off voltage
any I/O pin to GND
VRWM
Reverse breakdown voltage I_T=1mA, any I/O pin to GND
VBR
Reverse leakage current
V_RWM=5V, any I/O pin to GND
IR
Positive clamping voltage
I = _PP 1A, any I/O pin to GND (8/20us)
VC
Negative clamping voltage
I = _PP 1A, any I/O pin to GND (8/20us)
VC
Junction capacitance
between channel
V_R=0V, f=1MHz ,between I/O pins
CJ
Junction capacitance
between I/O and GND
V_R=0V, f=1MHz ,any I/O pin to GND
CJ
Note: I/O pins are pin 1,2,4,5.
Min.
6.0
Typ.
8.5
1.8
0.25
0.40
Max. Unit
5.0
V
V
1.0
uA
12.0
V
V
0.30
pF
0.60
pF
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Page 2
Document ID Issued Date
DS-221822 2016/04/19
Revised Date Revision
-
A
Page.
7