MDS12L Datasheet, PDF (2/7 Pages) Formosa MS – SMD Low VF Schottky Bridge Rectifier

SMD Low VF Schottky Bridge Rectifier
MDS12L THRU MDS110L
Formosa MS
1.0A Surface Mount Low VF
Schottky Barrier Single-Phase
Bridge Rectifiers-20-100V
Features
• Schottky barrier chips in TO-269AA bridge.
• Metal semiconductor junction with guard ring.
• Silicon epitaxial planar chips.
• Very low forward drop down voltage.
• For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications.
• Lead-free parts meet RoHS requirments.
• Suffix "-H" indicates Halogen free parts, ex. MDS12L-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, TO-269AA (MDS)
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : marked on body
• Mounting Position : Any
• Weight : Approximated 0.11 gram
Package outline
TO-269AA (MDS)
.031(0.8)
.019(0.5)
.193(4.9)
.177(4.5)
.106(2.7)
.090(2.3)
.165(4.2)
.142(3.6)
.008(0.2)MAX
.275(7.0)
MAX
.106(2.7)
.090(2.3)
.043(1.1)
.027(0.7)
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol MIN. TYP. ^MAX.
Average Forward rectified current 2.0x2.0”(5.0x5.0mm) copper pad, See Fig.1
I _{F ( AV )}
1.0
UNIT
A
Peak Forward surge current
8.3ms single half sine-wave (JEDEC methode)
I_FSM
30
A
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
V_R = V_RRM T_J = 25^OC
V_R = V_RRM T_J = 100^OC
Junction to ambient
Junction to lead
f=1MHz and applied 4V DC reverse voltage
I_R
R_θJA
R_θJL
C_J
T_STG
0.5
mA
20
75
O_C/W
15
250
pF
-65
+175 ^OC
SYMBOLS
MDS12L
MDS14L
MDS16L
MDS18L
MDS110L
V
*
RRM
1
(V)
20
40
60
80
100
V
RM
*
S
2
(V)
14
28
42
56
70
V
*
R
3
(V)
20
40
60
80
100
V
*
F
4
(V)
0.44
0.625
0.75
Operating
temperature
T_J, (^OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
per element at 1.0A peak
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Page 2
Document ID Issued Date
DS-241660 2009/08/10
Revised Date Revision
2014/06/04
D
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