FMBT3904W Datasheet, PDF (2/11 Pages) Formosa MS – SMD NPN Transistor

SMD NPN Transistor
FMBT3904W
200mA Silicon NPN Epitaxial Planar
Transistor
Features
• High collector-emitterbreakdien voltage.
(BV_CEO = 40V@I_C=1mA)
• Small load switch transistor with high gain and low
stauration voltage, is designed for general purpose
amflifier and switching applications at collector current.
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT3904W-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-323
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.006 gram
Formosa MS
Package outline
SOT-323
(B)
(C)
(A)
0.054 (1.35)
0.046 (1.15)
0.096 (2.40)
0.080 (2.00)
0.021 (0.53)
0.017 (0.42)
0.040 (1.00)
0.032 (0.80)
Dimensions in inches and (millimeters)
Maximum ratings (AT T_A=25^oC unless otherwise noted)
PARAMETER
CONDITIONS
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Total device dissipation
T_A = 25^OC
Thermal resistance
Junction to ambient
Operating junction temperature range
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
MIN.
TYP.
MAX. UNIT
60
V
40
V
6.0 V
200 ^mA
P_D
150 ^mW
R_θJA
T_J
-55
T_STG
-55
833 ^OC/W
+150 ^oC
+150 ^o_C
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Page 2
Document ID Issued Date
DS-231120 2008/02/10
Revised Date Revision
2010/03/10
B
Page.
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