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HVS6003-001 Datasheet, PDF (4/6 Pages) Finisar Corporation. – PHOTOREFLECTIVE SENSOR DOME LENS PACKAGE
HVS6003-001
PHOTOREFLECTIVE SENSOR
PHOTOTRANSISTOR ELECTRO-OPTICAL CHARACTERISTICS
TA=25°C unless otherwise stated
Phototransistor
Parameters
Internal Reflectance Current
Contrast Ratio
Collector Dark Current
Collector – Emitter Breakdown
Voltage
Emitter – Collector Breakdown
Voltage
Collector – Emitter Saturation
Voltage
Photocurrent Rise/Fall Time
Test Condition
VCE = 5V, IVCSEL =
8mA, No reflector
VCE = 5V, IVCSEL =
8mA
VCE = 0V, IVCSEL=0
IC=100μA
IE=100μA
IC=IL/8,
VCC=5V, IL=1mA,
RL=1000Ω
Symbol Min. Typ. Max.
IRI
1.0
3
5
18
ICEO
100
VBR-CEO
30
VBR-ECO
5
VSAT-CE
0.4
TR/TF
10
Units
mA
nA
V
V
V
μs
Notes
1
1
2
NOTES:
1. Configuration for measuring IRI and contrast ratio. Contrast ratio is defined as the ratio of photocurrent
with the reflector in place to the internal reflectance with the reflector removed. The reflector should be of
more than 90% reflectance (Alzac, polished Aluminum, etc.). Tested as shown in the figure below
2. The rise and fall times depend on the load resistor used.
Reflector
10mm
Nominal
4 degrees
The case lead and PIN 2 must be
oriented in the direction of tilt for
maximum responsivity.
CASE LEAD