XPDV412XR Datasheet, PDF (3/5 Pages) Finisar Corporation. – Ultra-Fast 100 GHz Photodetector

Ultra-Fast 100 GHz Photodetector – April 2014
IV. Environmental Conditions
Parameter
Operating Case Temperature
Relative Humidity
Storage Temperature
Symbol
TCase
RH
T_sto
V. Operating Conditions
Condition
non condensing
Min. Typ. Max. Unit
0
75 °C
5
85 %
-40
85 °C
Parameter
Symbol
Operating Wavelength Range
λ
Average Optical Input Power Range ^POPT
Photodiode Bias Voltage
V_PD
VI. Electro-Optical Specifications¹
Condition
Min.
1480
-20
1.5
Typ.
2.0
Max. Unit
1620 nm
10 _dBm
2.8 V
Parameter
Symbol
Condition
Photodiode DC Responsivity
R
optimum polarization
Polarization Dependent Loss
PDL
Optical Return Loss
ORL
3dB Cut-off Frequency²
XPDV4121R
f_3dB
XPDV4120R
Output Reflection Coefficient
0.05 - 50 GHZ
S₂₂
50 - 100 GHZ
Overload
P_OVERL
Photodiode Dark Current
I _dark
Pulse Width³
Notes:
1.
2.
3.
VPD = 2.8 V, Tcase = 25 °C, 1550 nm
measured using a heterodyne measurement system
measured utilizing Tektronix Scope with 70 GHz sampling head
Min.
27
100
90
Typ.
0.5
0.5
110
95
-10
-5
10
5
7.5
Max. Unit
A/W
dB
dB
GHz
GHz
-8 dB
dBm
200 nA
8 Ps
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