XPDV412XR Datasheet, PDF (1/5 Pages) Finisar Corporation. – Ultra-Fast 100 GHz Photodetector

Product Specification
Ultra-Fast 100 GHz Photodetector
XPDV412xR
PRODUCT FEATURES
 100 GHz electrical 3 dB bandwidth
 Flat response of up to 100 GHz
 Excellent pulse behavior
 Well matched 50 Ω output
APPLICATIONS
 High-speed lightwave characterization
 100 Gb/s communication systems
 Microwave photonics
The XPDV412xR comprises an optimized 100 GHz waveguide-integrated photodiode, which
shows an extremely flat frequency response in both, power and phase. The on-chip integrated bias
network with an optimized RF design in particular, ensures an undisturbed frequency response
from DC to the 3 dB cut-off frequency and saves costs for internal bias-tees. The module is
especially designed for optimal RF performance; therefore the pulse response reveals virtually no
ringing. A further advantage of the waveguide structure is the unbeatable high-power behavior.
The photodetector shows a linear response up to an optical input power of 10dBm. An output
voltage swing of more than 0.5 Vpp can be achieved for short pulses without any degradation of
the pulse response. Each photodetector module is characterized in the frequency domain by using
a heterodyne technique. In the time domain, a femto-second pulse source and a 70 GHz sampling
oscilloscope are used to measure the pulse response.
ORDERING INFORMATION
XPDV412xR-WF-zz
x:
1
= minimum 100 GHz
0
= minimum 90 GHz
zz: FP = FC/PC (standard)
Customized connectorization available upon request
Confidential and Proprietary © 2014 Finisar Corporation. All rights reserved
Rev. A1 Page 1