LPV1500 Datasheet, PDF (2/2 Pages) Filtronic Compound Semiconductors – PACKAGED LOW NOISE PHEMT

Filtronic
Solid State
LPV1500
1 W Power PHEMT
ABSOLUTE MAXIMUM RATINGS
SYMBOL
(25°C)
PARAMETER
RATING¹
V_DS
Drain-Source Voltage
+12V
V_GS Gate-Source Voltage
-5V
I_DS
Drain-Source Current 2 x I_DSS
I_G
Gate Current
70 mA
P_IN
RF Input Power
750 mW
T_CH
Channel Temperature +175°C
T_STG
P_T
Storage Temperature -65/175°C
Power Dissipation
3.33W^3,4
RECOMMENDED CONTINUOUS
OPERATING LIMITS
SYMBOL
PARAMETER
RATING²
V_DS
Drain-Source Voltage
+8V
V_GS
Gate-Source Voltage
-1V
I_DS
Drain-Source Current 0.8 x I_DSS
I_G
Gate Current
15 mA
P_IN
RF Input Power
300 mW
T_CH
Channel Temperature +150°C
T_STG
P_T
G_XdB
Storage Temperature
Power Dissipation
Gain Compression
-20/50°C
3.0 W^3,4
8 dB
NOTES:
1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: P_T ≡ (P_DC + P_IN) - P_OUT, where: P_DC = DC bias power, P_OUT = RF output power, and
P_IN = RF input power.
4. Power Dissipation to be de-rated as follows:
PT(W)
5. Specifications subject to change without notice.
3.33
Example #1:
-22-22 mW/^oC
mW/^oC
V_DS = 8V, I_DS = 315 mA
3.0
P_IN = P_OUT = 0 dBm (quiescent condition):
P_T = P_DC = 2.52W
Max. continuous T_HS = 37°C
-24 mW/^oC
Example #2:
V_DS = 8V, I_DS = 315 mA
P_IN = 23 dBm P_OUT = 31 dBm
P_T = (2.52+0.2) - 1.26 = 1.46W
Max. continuous T_HS = 84°C
HANDLING PRECAUTIONS:
25
150
117755T^HS(oC)
PHEMT chips should be stored in a dry nitrogen environment until assembly. Care should be exercised during handling to
avoid damage to the devices. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of
storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500V), and further information
on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
ASSEMBLY INSTRUCTIONS:
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-
290°C; maximum time at temperature is 1 min. The recommended wire bond method is thermo-compression wedge
bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260°C.
APPLICATIONS NOTES AND DESIGN DATA:
Applications Notes are available from your local FSS Sales Representative, or directly from the factory. Complete design
data, including S-parameters, Noise data, and Large-Signal models, is available on 3.5” diskette, or may be down-loaded
from our Web Page.
DSS-041 WA
Phone: [phone]
Internet: http://www.filtronicsolidstate.com
Fax: [phone]