LPV1500 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – PACKAGED LOW NOISE PHEMT

Filtronic
Solid State
LPV1500
1 W Power PHEMT
FEATURES
• +31.5 dBm Typical Power at 18 GHz
• 8.5 dB Typical Power Gain at 18 GHz
• +27 dBm at 3.3V Battery Voltage
• +45 dBm Typical Intercept Point
• 50% Power-Added-Efficiency at 18 GHz
• Plated Source Thru-Vias
DRAIN
SOURCE
DRAIN
GATE
DIE SIZE: 16.5 x 16.1 mils (420 x 410 µm)
DIE THICKNESS: 3.0 mils (75 µm typ.)
BONDING PADS: 1.9 x 2.4 mils (50 x 60 µm typ.)
DESCRIPTION AND APPLICATIONS
The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High
Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for reliable high-power applications. The LP1V500 also features Si₃N₄ passivation
and is available in a flanged ceramic package (P100). The LPV1500 features plated source thru-vias for improved
performance.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The
LP1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is
patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.
PERFORMANCE SPECIFICATIONS (T_A = 25°C)
SYMBOLS PARAMETERS
I_DSS
P_1dB
G_1dB
IP3
Saturated Drain-Source Current
V_DS = 2V V_GS = 0V
Output Power at 1dB Gain Compression
V_DS = 8.0V, I_DS = 50% I_DSS
f = 18 GHz
Power Gain at 1dB Gain Compression
V_DS = 8.0V, I_DS = 50% I_DSS
f = 18 GHz
Output 3rd-Order Intercept Pt. V_DS = 8V, I_DS = 40% I_DSS,
η_ADD
I_MAX
Power-Added Efficiency
Maximum Drain-Source Current
V_DS = 2V V_GS = +1V
G_M
Transconductance
V_DS = 2V V_GS = 0V
V_P
Pinch-Off Voltage
I_GSO
Gate-Source Leakage Current
V_DS = 2V I_DS = 5mA
V_GS = -5V
BV_GS
BV_GD
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
I_GS = 8mA
I_GD = 8mA
Θ_J
Thermal Resistivity
MIN TYP MAX UNITS
375 490 600 mA
30.0 31.5
dBm
6.5
8.5
45
dB
dBm
50
%
925
mA
350 450
mS
-0.25 -1.2 -2.0
V
10
75
µA
-12 -15
V
-12 -16
V
45
°C/W
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DSS-041 WA
Internet: http://www.filtronicsolidstate.com
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