LP3000SOT89 Datasheet, PDF (2/3 Pages) Filtronic Compound Semiconductors – LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

LP3000SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
• ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V_DS
V_GS
I_DS
I_G
P_IN
T_CH
T_STG
P_TOT
Test Conditions
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
—
T_Ambient = 22 ± 3 °C
Min Max Units
7
V
-4
V
I_DSS
mA
30
mA
1
W
175
ºC
-65
175
ºC
3.75
W
Notes:
•
•
•
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P_TOT ≡ (P_DC + P_IN) – P_OUT, where
P_DC: DC Bias Power
P_IN: RF Input Power
P_OUT: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
P_TOT= 3.75W – (0.025W/°C) x T_HS
where T_PACK = source tab lead temperature..
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
• OPTIMUM POWER OUTPUT MATCHING
Frequency (GHz)
1.8
2.2
2.5
Load State
Magnitude
Phase
0.77
-154°
0.68
-150°
0.59
-143°
• HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
• APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
Phone: [phone]
Fax: [phone]
http:// www.filss.com
Revised: 1/16/02
Email: [e-mail]