LP1500P100 Datasheet, PDF (2/3 Pages) Filtronic Compound Semiconductors – PACKAGED 1W POWER PHEMT

LP1500P100
PACKAGED 1W POWER PHEMT
• ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V_DS
V_GS
I_DS
I_G
P_IN
T_CH
T_STG
P_TOT
Test Conditions
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
—
T_Ambient = 22 ± 3 °C
Min Max Units
12
V
-4
V
2xI_DSS
mA
15
mA
700
mW
175
ºC
-65
175
ºC
3.0
W
Notes:
•
•
•
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Power Dissipation defined as: P_TOT ≡ (P_DC + P_IN) – P_OUT, where
P_DC: DC Bias Power
P_IN: RF Input Power
P_OUT: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
P_TOT= 3.0W – (0.020W/°C) x T_HS
where T_HS = heatsink or ambient temperature.
This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
• HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
• APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
Phone: [phone]
Fax: [phone]
http:// www.filss.com
Revised: 1/20/01
Email: [e-mail]