LP1500P100 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – PACKAGED 1W POWER PHEMT

• FEATURES
♦ 31 dBm Output Power at 1-dB Compression at 15 GHz
♦ 9 dB Power Gain at 15 GHz
♦ 42 dBm Output IP3 at 15GHz
♦ 60% Power-Added Efficiency
LP1500P100
PACKAGED 1W POWER PHEMT
• DESCRIPTION AND APPLICATIONS
The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si3N4 passivation and is available in die form or in other packages.
The LP1500P100 is designed for medium-power, linear amplification. This device is suitable for
applications in commercial and military environments, and it is appropriate to be used as a medium
power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high
efficiency amplifiers, and WLL systems.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Symbol
I_DSS
P-1dB
G-1dB
PAE
Output Third-Order Intercept Point IP3
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
frequency=15 GHz
I_MAX
G_M
I_GSO
V_P
|V_BDGS|
|V_BDGD|
Test Conditions
V_DS = 2 V; V_GS = 0 V
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS
V_DS = 8 V; I_DS = 50% I_DSS;
P_IN = 17 dBm
V_DS = 8V; I_DS = 50% I_DSS;
P_IN = 10 dBm
V_DS = 2 V; V_GS = 1 V
V_DS = 2 V; V_GS = 0 V
V_GS = -5 V
V_DS = 2 V; I_DS = 5 mA
I_GS = 8 mA
I_GD = 8 mA
Min Typ Max Units
375 490 600 mA
29.5 31
dBm
8
9
dB
60
%
42
dBm
925
mA
300 400
mS
10 100 µA
-0.25 -1.2 -2.0
V
-12 -15
V
-12 -16
V
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Revised: 1/20/01
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