LMA411 Datasheet, PDF (2/5 Pages) Filtronic Compound Semiconductors – LOW NOISE PHEMT MMIC

LMA411
LOW NOISE PHEMT MMIC
• ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Min Max Units
Drain Voltage
Operating Current
RF Input Power
Total Power Dissipation
Channel Operating Temperature
Storage Temperature
Maximum Assembly Temperature
(1 min. max.)
V_D
I_{O P}
P_IN
P_TOT
T_CH
T_STG
T_MAX
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
—
—
7
V
315
mA
15
dBm
2
W
150
ºC
-65
165
ºC
300
ºC
Notes:
•
•
•
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Recommended Continuous Operating Limits should be observed for reliable device operation.
Power Dissipation defined as: P_TOT ≡ (P_DC + P_IN) – P_OUT, where
P_DC: DC Bias Power
P_IN: RF Input Power
P_OUT: RF Output Power
This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when
handling these devices.
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Revised: 09/07/01
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