FP4050 Datasheet, PDF (2/2 Pages) Filtronic Compound Semiconductors – 2-WATT POWER PHEMT

PRELIMINARY DATA SHEET
FP4050
2-WATT POWER PHEMT
• RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter
Symbol Nominal Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
RF Input Power
Channel Operating Temperature
Ambient Temperature
V_DS
8
V
V_GS
-1.0
V
I_DS
500
mA
P_IN
800
mW
T_CH
150
°C
T_STG
-20/50
°C
Note: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
• ABSOLUTE RATINGS
Parameter
Symbol
Test Conditions
Min Max Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
V_DS
V_GS
I_DS
I_G
P_IN
T_CH
T_STG
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
—
10
V
-5
V
800 mA
180 mA
TBD mW
175
ºC
-65 175
ºC
Note: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the
device.
• HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
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Fax: [phone]
All information and specifications are subject to change without notice.
http:// www.filtronicsolidstate.com
Revised: 10/04/00