FP4050 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – 2-WATT POWER PHEMT

PRELIMINARY DATA SHEET
FP4050
2-WATT POWER PHEMT
• FEATURES
♦ 48 dBm IP3 at 2 GHz
♦ 34 dBm P-1dB at 2 GHz
♦ 14 dB Power Gain at 2 GHz
DRAIN
BOND PAD
SOURCE
BOND PAD
(2X)
• DESCRIPTION AND APPLICATIONS
GATE
BOND PAD
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.
Typical applications include commercial and military high-performance power amplifiers, including
SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and
medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and
ISM band spread spectrum applications.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 2 2 ±3 °C
Parameter
Output Power @
1dB Compression
Power Gain @
1dB Compression
Saturated Drain-Source Current
Symbol
Test Conditions
Min Typ Max Units
P_1dB f = 2 GHz; V_DS = 8V; I_DS = 50% I_DSS
34
dBm
G_1dB f = 2 GHz; V_DS = 8V; I_DS = 50% I_DSS
14
dB
I_DSS
V_DS = 2V; V_GS = 0V
950 1100 1300 mA
Maximum Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
Gate-Source Breakdown
Voltage Magnitude
Gate-Source Leakage
Current Magnitude
Thermal Resistivity
I_MAX
G_M
V_P
|V_BDGD|
|V_BDGS|
|I_GSL|
Q_JC
V_DS = 2V; V_GS = 1V
V_DS = 2 V; V_GS = 0 V
V_DS = 2 V; I_DS = 10 mA
I_GS = 20 mA
I_GS = 20 mA
V_GS = -5 V
2200
mA
880
mS
-1.2
V
12 15
V
12 15
V
0.2 mA
15
°C/W
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http:// www.filtronicsolidstate.com
Revised: 10/04/00