FP100 Datasheet, PDF (2/2 Pages) Filtronic Compound Semiconductors – HIGH PERFORMANCE PHEMT

PRELIMINARY DATA SHEET
FP100
HIGH PERFORMANCE PHEMT
• RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
RF Input Power
Channel Operating Temperature
Ambient Temperature
Symbol
V_{D S}
V_{G S}
I_{D S}
P_IN
T_CH
T_STG
Nominal
5
-0.8
0.5 I_DSS
30
150
-20/50
Units
V
V
mA
mW
°C
°C
Note: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance.
• ABSOLUTE RATINGS
Parameter
Symbol
Test Conditions
Min Max Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
V_{D S}
V_{G S}
I_{D S}
I_G
P_IN
T_CH
T_STG
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
T_Ambient = 22 ± 3 °C
—
7
V
-3
V
I_DSS
mA
2.5
mA
60
mW
175
ºC
-65 175
ºC
Note: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage
to the device.
• APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
• HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
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Revised: 07/18/01