FP100 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – HIGH PERFORMANCE PHEMT

PRELIMINARY DATA SHEET
FP100
HIGH PERFORMANCE PHEMT
• FEATURES
♦ 14 dBm P-1dB at 12 GHz
♦ 9 dB Power Gain at 12 GHz
♦ 3.0 dB Noise Figure at 12 GHz
• DESCRIPTION AND APPLICATIONS
DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm)
DIE THICKNESS: 3.9 mils (100 µm typ.)
BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.)
The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25 um by 100 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The FP100 features Si3N4 passivation.
Typical applications include general purpose, low noise and broadband amplifiers in the 2-20 GHz
range. The device is well-suited for telecommunication applications.
• ELECTRICAL SPECIFICATIONS @ TAmbient = 22 ± 3 °C
Parameter
Output Power @
1dB Compression
Power Gain @
1dB Compression
Maximum Available Gain
Noise Figure
Power-Added Efficiency
Saturated Drain-Source Current
Transconductance
Pinch-Off Voltage
Gate-Drain Breakdown
Voltage Magnitude
Gate-Source Breakdown
Voltage Magnitude
Gate-Source Leakage
Current Magnitude
Symbol
P_1dB
G_1dB
MAG
NF
η
I_DSS
G_M
V_P
|V_BDGD|
|V_BDGS|
|I_GSL |
Test Conditions
f = 12 GHz; V_DS = 5V; I_DS = 50% I_DSS
f = 12 GHz; V_DS = 5V; I_DS = 50% I_DSS
f = 12 GHz; V_DS = 5V; I_DS = 50% I_DSS
f = 12 GHz; V_DS = 5V; I_DS = 50% I_DSS
f = 12 GHz; V_DS = 5V; I_DS = 50% I_DSS;
P_OUT = 15.5 dBm
V_DS = 2 V; V_GS = 0 V
V_DS = 2 V; V_GS = 0 V
V_DS = 2 V; I_DS = 1 mA
I_GS = 1 mA
I_GS = 1 mA
V_GS = -5 V
Min
13
8
14.5
20
15
15
-0.50
8
7
Typ Max Units
14
dBm
9
dB
15.5
dB
3.0
dB
25
%
30 mA
20
mS
-2.5 V
10.5
V
10
V
4 10 µA
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Revised: 07/18/01