LP1500SOT223 Datasheet, PDF (1/2 Pages) Filtronic Compound Semiconductors – Low Noise, High Linearity Packaged PHEMT

Filtronic
Solid State
LP1500SOT223
Low Noise, High Linearity Packaged PHEMT
FEATURES
• +27 dBm Typical Power at 1800 MHz
• 15 dB Typical Power Gain at 1800 MHz
• 1.0 dB Typical Noise Figure
• +42 dBm Typical Intercept Point
• Color-coded by I_DSS range
GATE
SOURCE
DRAIN
SOURCE
DESCRIPTION AND APPLICATIONS
(TOP VIEW)
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µm by 1500 µm
Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si₃N₄ passivation and is available in a die form or in a flanged ceramic package (P100) for high-power
applications, or in the SOT-89 plastic package.
Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power
amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (T_A = 25°C)
SYMBOLS
I_DSS
P_1dB
G_1dB
NF
IP3
I_MAX
G_M
V_P
I_GSO
BV_GS
BV_GD
PARAMETERS
Saturated Drain-Source Current
LP1500-SOT223-1 BLUE
V_DS = 2V V_GS = 0V
LP1500-SOT223-2 GREEN
LP1500-SOT223-3 RED
Output Power at 1dB Gain Compression
V_DS = 3.3V, I_DS = 33% I_DSS
f = 1800 Mhz
Power Gain at 1dB Gain Compression
V_DS = 3.3V, I_DS = 33% I_DSS
f = 1800 MHz
Noise Figure V_DS = 3.3V, I_DS = 33% I_DSS, f = 1.8 GHz
Output Intercept Point V_DS = 3.3V, I_DS = 33% I_DSS, f = 1.8 GHz
Maximum Drain-Source Current
V_DS = 2V V_GS = +1V
Transconductance
V_DS = 2V V_GS = 0V
Pinch-Off Voltage
V_DS = 2V I_DS = 5mA
Gate-Source Leakage Current
V_GS = -3V
Gate-Source Breakdown Voltage
I_GS = 8mA
Gate-Drain Breakdown Voltage
I_GD = 8mA
MIN TYP MAX UNITS
375 420 450 mA
451 490 526
527 560 600
25.0 27.0
dBm
13.5 15.0
dB
1.0
dB
42
dBm
925
mA
300 400
mS
-0.25 -1.2 -2.0 V
10 75 µA
-8 -10
V
-8 -11
V
DSS-026 WF
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