FMS2020 Datasheet, PDF (1/4 Pages) Filtronic Compound Semiconductors – GaAs Multi-Purpose Wide Band SPDT Switch

Advanced Product Information ^1.1
FMS2020
GaAs Multi-Purpose Wide Band SPDT Switch
Features:
♦ Available in die form
♦ Suitable for L and S-band digital
cellular, cordless telephony and WLAN
applications
♦ High isolation, 30dB typ at 2.5GHz
♦ Low insertion loss, 0.4dB typ at 2.5GHz
♦ P0.1dB > 35dBm
Functional Schematic
ANT
V1
V2
RF1
RF2
Description and Applications:
The FMS2020 is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna
switch. The die is fabricated using the Filtronic FL05 0.5µm switch process technology which offers
leading edge performance optimised for switch applications. The FMS2020 is designed for use in L
and S band wireless applications.
Electrical Specifications: (T_AMBIENT = 25°C,V_control = 0V/2.5V, Z_IN = Z_OUT = 50Ω)
Parameter
Test Conditions
Min Typ
Insertion Loss
Return Loss
Isolation
Input power at 0.1dB compression point
2nd Harmonic Level
3rd Harmonic Level
Switching speed : Trise, Tfall
Ton, Toff
Control Current
0.5 – 1.0 GHz
1.0 – 2.5 GHz
0.5 – 2.5 GHz
0.5 – 1.0 GHz
1.0 – 2.5 GHz
1GHz
1 GHz, Pin = +35 dBm, 100% Duty Cycle
1 GHz, Pin = +35 dBm, 100% Duty Cycle
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10%
RF
0.4
0.4
25
33
30
36
-75
-75
<0.3
<1.0
1
Note: External DC blocking capacitors are required on all RF ports (typ: 100pF)
Max
Units
dB
dB
dB
dB
dB
dBc
dBc
µs
µs
µA
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: [phone] Fax: [phone] Email: [e-mail]
Contact Details (USA): Tel: [phone] Fax: [phone] Email: [e-mail]
Website: www.filcs.com