EFD30 Datasheet, PDF (3/6 Pages) NXP Semiconductors – EFD cores and accessories

Ferroxcube
EFD cores and accessories
EFD30/15/9
GRADE
3F3
3F35
3F4
3F45
A_L
(nH)
160 ±3%
250 ±3%
315 ±5%
400 ±8%
630 ±10%
1900 ±25%
1450 ±25%
160 ±3%
250 ±3%
315 ±5%
400 ±8%
630 ±10%
1000 ±25%
1000 ±25%
µ_e
≈ 125
≈ 196
≈ 247
≈ 314
≈ 494
≈ 1560
≈ 1170
≈ 125
≈ 196
≈ 247
≈ 314
≈ 494
≈ 780
≈ 780
AIR GAP
(µm)
≈ 690
≈ 390
≈ 290
≈ 210
≈ 120
≈0
≈0
≈ 620
≈ 320
≈ 230
≈ 160
≈ 65
≈0
≈0
TYPE NUMBER
EFD30/15/9-3F3-A160
EFD30/15/9-3F3-A250
EFD30/15/9-3F3-A315
EFD30/15/9-3F3-A400
EFD30/15/9-3F3-A630
EFD30/15/9-3F3
EFD30/15/9-3F35
EFD30/15/9-3F4-A160
EFD30/15/9-3F4-A250
EFD30/15/9-3F4-A315
EFD30/15/9-3F4-A400
EFD30/15/9-3F4-A630
EFD30/15/9-3F4
EFD30/15/9-3F45
Properties of core sets under power conditions
B (mT) at
CORE LOSS (W) at
GRADE
3C90
3C94
3C95
3C96
3F35
3F3
3F4
H = 250 A/m;
f = 25 kHz;
T = 100 °C
≥330
≥330
≥330
≥340
≥300
≥315
≥300
f = 25 kHz;
B^ˆ = 200 mT;
T = 100 °C
≤ 0.50
−
−
−
−
−
−
f = 100 kHz;
B^{ˆ = 100 mT;}
T = 100 °C
≤ 0.54
≤ 0.43
−
≤ 0.32
−
≤ 0.54
−
f = 100 kHz;
B^{ˆ = 200 mT;}
T = 25 °C
−
−
≤ 2.77
−
−
−
−
f = 100 kHz;
B^{ˆ = 200 mT;}
T = 100 °C
−
≤ 2.6
≤ 2.63
≤ 2.0
−
−
−
f = 400 kHz;
B^{ˆ = 50 mT;}
T = 100 °C
−
−
−
≤ 0.82
≤ 0.4
≤ 0.91
−
Properties of core sets under power conditions (continued)
B (mT) at
CORE LOSS (W) at
GRADE
3C90
3C94
3C95
3C96
3F35
3F3
3F4
3F45
H = 250 A/m;
f = 25 kHz;
T = 100 °C
≥330
≥330
≥330
≥340
≥300
≥315
≥300
≥300
f = 500 kHz;
B^{ˆ = 50 mT;}
T = 100 °C
−
−
−
≤ 1.7
≤ 0.6
−
−
−
f = 500 kHz;
B^{ˆ = 100 mT;}
T = 100 °C
−
−
−
−
≤ 4.5
−
−
−
f = 1 MHz;
B^{ˆ = 30 mT;}
T = 100 °C
−
−
−
−
−
−
≤ 1.4
≤ 1.1
f = 1 MHz;
B^{ˆ = 50 mT;}
T = 100 °C
−
−
−
−
−
−
−
≤ 4.0
2008 Sep 01
3
f = 3 MHz;
B^{ˆ = 10 mT;}
T = 100 °C
−
−
−
−
−
−
≤ 2.2
≤ 1.8